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1. product profile 1.1 general description complementary n/p-channel enhancement mode field-effect transistor (fet) in an ultra small and flat lead sot666 surface-mounted device (smd) plastic package using trench mosfet technology. 1.2 features and benefits ? very fast switching ? trench mosfet technology ? esd protection up to 2 kv ? aec-q101 qualified 1.3 applications ? relay driver ? high-speed line driver ? low-side loadswitch ? switching circuits 1.4 quick reference data [1] device mounted on an fr4 pcb, single-sided copper , tin-plated and mounting pad for drain 1 cm 2 . PMDT290UCE 20 / 20 v, 800 / 550 ma n/p-channel trench mosfet rev. 1 ? 6 october 2011 product data sheet sot666 table 1. quick reference data symbol parameter conditions min typ max unit tr1 (n-channel), static characteristics r dson drain-source on-state resistance v gs =4.5v; i d = 500 ma; t j = 25 c - 290 380 m ? tr2 (p-channel), static characteristics r dson drain-source on-state resistance v gs =-4.5v; i d = -400 ma; t j = 25 c - 0.67 0.85 ? tr1 (n-channel) v ds drain-source voltage t j =25c --20v v gs gate-source voltage -8 - 8 v i d drain current v gs =4.5v; t amb =25c [1] - - 800 ma tr2 (p-channel) v ds drain-source voltage t j =25c ---20v v gs gate-source voltage -8 - 8 v i d drain current v gs =-4.5v; t amb =25c [1] ---550ma
PMDT290UCE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 6 october 2011 2 of 20 nxp semiconductors PMDT290UCE 20 / 20 v, 800 / 550 ma n/p-channel trench mosfet 2. pinning information 3. ordering information 4. marking 5. limiting values table 2. pinning information pin symbol description simplified outline graphic symbol 1s1source tr1 sot666 2 g1 gate tr1 3d2drain tr2 4s2source tr2 5 g2 gate tr2 6d1drain tr1 123 456 017aaa262 d1 s1 g1 d2 s2 g2 table 3. ordering information type number package name description version PMDT290UCE - plastic surface-mounted package; 6 leads sot666 table 4. marking codes type number marking code PMDT290UCE af table 5. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit tr1 (n-channel) v ds drain-source voltage t j =25c - 20 v v gs gate-source voltage -8 8 v i d drain current v gs =4.5v; t amb =25c [1] - 800 ma v gs =4.5v; t amb =100c [1] - 500 ma i dm peak drain current t amb = 25 c; single pulse; t p 10 s - 3.2 a p tot total power dissipation t amb =25c [2] - 330 mw [1] - 390 mw t sp = 25 c - 1090 mw tr1 (n-channel), so urce-drain diode i s source current t amb =25c [1] - 370 ma tr1 n-channel), esd maximum rating v esd electrostatic discharge voltage hbm [3] - 2000 v
PMDT290UCE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 6 october 2011 3 of 20 nxp semiconductors PMDT290UCE 20 / 20 v, 800 / 550 ma n/p-channel trench mosfet [1] device mounted on an fr4 pcb, single-sided copper , tin-plated and mounting pad for drain 1 cm 2 . [2] device mounted on an fr4 printed-circuit board (pcb ), single-sided copper; tin-plated and standard footprint. [3] measured between all pins. tr2 (p-channel) v ds drain-source voltage t j =25c - -20 v v gs gate-source voltage -8 8 v i d drain current v gs =-4.5v; t amb =25c [1] - -550 ma v gs =-4.5v; t amb =100c [1] - -350 ma i dm peak drain current t amb = 25 c; single pulse; t p 10 s - -2.2 a p tot total power dissipation t amb =25c [2] - 330 mw [1] - 390 mw t sp = 25 c - 1090 mw tr2 (p-channel), so urce-drain diode i s source current t amb =25c [1] - -370 ma tr2 (p-channel), esd maximum rating v esd electrostatic discharge voltage hbm [3] - 2000 v per device p tot total power dissipation t amb =25c [2] - 500 mw t j junction temperature -55 150 c t amb ambient temperature -55 150 c t stg storage temperature -65 150 c table 5. limiting values ?continued in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit fig 1. normalized total power dissipation as a function of junction temperature fig 2. normalized continuous drain current as a function of junction temperature t j (c) ?75 175 125 25 75 ?25 017aaa123 40 80 120 p der (%) 0 t j (c) ?75 175 125 25 75 ?25 017aaa124 40 80 120 i der (%) 0
PMDT290UCE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 6 october 2011 4 of 20 nxp semiconductors PMDT290UCE 20 / 20 v, 800 / 550 ma n/p-channel trench mosfet i dm = single pulse (1) t p = 1 ms (2) t p = 10 ms (3) dc; t sp = 25 c (4) t p = 100 ms (5) dc; t amb = 25 c; drain mounting pad 1 cm 2 fig 3. safe operating area tr1 (n-channel); junction to ambient; continuous and peak drain currents as a function of drain-source voltage i dm = single pulse (1) t p = 1 ms (2) t p = 10 ms (3) dc; t sp = 25 c (4) t p = 100 ms (5) dc; t amb = 25 c; drain mounting pad 1 cm 2 fig 4. safe operating area tr2 (p-channel); junction to ambient; continuous and peak drain currents as a function of drain-source voltage 017aaa361 v ds (v) 10 C1 10 2 10 1 1 10 C1 10 i d (a) 10 C2 limit r dson = v ds /i d (1) (2) (3) (4) (5) 017aaa373 v ds (v) C10 C1 C10 2 C10 C1 C1 C10 C1 C10 i d (a) C10 C2 limit r dson = v ds /i d (1) (2) (3) (4) (5)
PMDT290UCE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 6 october 2011 5 of 20 nxp semiconductors PMDT290UCE 20 / 20 v, 800 / 550 ma n/p-channel trench mosfet 6. thermal characteristics [1] device mounted on an fr4 printed-circuit board (pcb ), single-sided copper; tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper , tin-plated and mounting pad for drain 1 cm 2 . table 6. thermal characteristics symbol parameter conditions min typ max unit tr1 (n-channel) r th(j-a) thermal resistance from junction to ambient in free air [1] - 330 380 k/w [2] - 280 320 k/w r th(j-sp) thermal resistance from junction to solder point --115k/w tr2 (p-channel) r th(j-a) thermal resistance from junction to ambient in free air [1] - 330 380 k/w [2] - 280 320 k/w r th(j-sp) thermal resistance from junction to solder point --115k/w per device r th(j-a) thermal resistance from junction to ambient in free air [1] - - 250 k/w fr4 pcb, standard footprint fig 5. tr1: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa064 t p (s) 10 ?3 10 2 10 3 10 1 10 ?2 10 ?1 10 2 10 10 3 z th(j-a) (k/w) 1 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0
PMDT290UCE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 6 october 2011 6 of 20 nxp semiconductors PMDT290UCE 20 / 20 v, 800 / 550 ma n/p-channel trench mosfet fr4 pcb, mounting pad for drain 1 cm 2 fig 6. tr1: transient thermal impedance from junction to ambient as a function of pulse duration; typical values fr4 pcb, standard footprint fig 7. tr2: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa065 t p (s) 10 ?3 10 2 10 3 10 1 10 ?2 10 ?1 10 2 10 10 3 z th(j-a) (k/w) 1 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0 017aaa064 t p (s) 10 ?3 10 2 10 3 10 1 10 ?2 10 ?1 10 2 10 10 3 z th(j-a) (k/w) 1 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0
PMDT290UCE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 6 october 2011 7 of 20 nxp semiconductors PMDT290UCE 20 / 20 v, 800 / 550 ma n/p-channel trench mosfet 7. characteristics fr4 pcb, mounting pad for drain 1 cm 2 fig 8. tr2: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa065 t p (s) 10 ?3 10 2 10 3 10 1 10 ?2 10 ?1 10 2 10 10 3 z th(j-a) (k/w) 1 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0 table 7. characteristics symbol parameter conditions min typ max unit tr1 (n-channel), static characteristics v (br)dss drain-source breakdown voltage i d =250a; v gs =0v; t j =25c 20--v v gsth gate-source threshold voltage i d =250a; v ds =v gs ; t j = 25 c 0.5 0.75 0.95 v i dss drain leakage current v ds =20v; v gs =0v; t j =25c --1a v ds =20v; v gs =0v; t j =150c --10a i gss gate leakage current v gs =8v; v ds =0v; t j =25c --2a v gs =-8v; v ds =0v; t j =25c --2a v gs =4.5v; v ds =0v; t j = 25 c - - 500 na v gs =-4.5v; v ds =0v; t j = 25 c - - 500 na r dson drain-source on-state resistance v gs =4.5v; i d = 500 ma; t j = 25 c - 290 380 m ? v gs =4.5v; i d = 500 ma; t j = 150 c - 460 610 m ? v gs =2.5v; i d = 200 ma; t j = 25 c - 420 620 m ? v gs =1.8v; i d =10ma; t j =25c - 0.6 1.1 ? g fs transfer conductance v ds =10v; i d = 200 ma; t j =25c - 1.6 - s tr1 (n-channel), dynamic characteristics q g(tot) total gate charge v ds =10v; i d = 500 ma; v gs =4.5v; t j =25c - 0.45 0.68 nc q gs gate-source charge - 0.15 - nc q gd gate-drain charge - 0.15 - nc
PMDT290UCE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 6 october 2011 8 of 20 nxp semiconductors PMDT290UCE 20 / 20 v, 800 / 550 ma n/p-channel trench mosfet c iss input capacitance v ds =10v; f=1mhz; v gs =0v; t j =25c - 5583pf c oss output capacitance - 15 - pf c rss reverse transfer capacitance -7-pf t d(on) turn-on delay time v ds =10v; r l = 250 ? ; v gs =4.5v; r g(ext) =6 ? ; t j =25c - 6 12 ns t r rise time - 4 - ns t d(off) turn-off delay time - 86 172 ns t f fall time - 31 - ns tr1 (n-channel), source-drain diode characteristics v sd source-drain voltage i s =300ma; v gs =0v; t j = 25 c 0.48 0.77 1.2 v tr2 (p-channel), static characteristics v (br)dss drain-source breakdown voltage i d =-250a; v gs =0v; t j =25c -20--v v gsth gate-source threshold voltage i d =-250a; v ds =v gs ; t j = 25 c -0.5 -0.8 -1.3 v i dss drain leakage current v ds =-20v; v gs =0v; t j =25c ---1a v ds =-20v; v gs =0v; t j = 150 c - - -10 a i gss gate leakage current v gs =8v; v ds =0v; t j =25c ---2a v gs =-8v; v ds =0v; t j =25c ---2a v gs =4.5v; v ds =0v; t j =25c ---0.5a v gs =-4.5v; v ds =0v; t j =25c ---0.5a r dson drain-source on-state resistance v gs =-4.5v; i d = -400 ma; t j = 25 c - 0.67 0.85 ? v gs =-4.5v; i d = -400 ma; t j = 150 c - 1.1 1.4 ? v gs =-2.5v; i d = -200 ma; t j =25c - 1.2 1.5 ? v gs =-1.8v; i d =-10ma; t j =25c - 1.8 2.8 ? g fs transfer conductance v ds =-10v; i d = -200 ma; t j = 25 c - 610 - ms tr2 (p-channel), dynamic characteristics q g(tot) total gate charge v ds =-10v; i d = -400 ma; v gs =-4.5v; t j =25c - 0.76 1.14 nc q gs gate-source charge - 0.28 - nc q gd gate-drain charge - 0.18 - nc c iss input capacitance v ds = -10 v; f = 1 mhz; v gs =0v; t j =25c - 5887pf c oss output capacitance - 21 - pf c rss reverse transfer capacitance -12-pf t d(on) turn-on delay time v ds =-10v; r l = 250 ? ; v gs =-4.5v; r g(ext) =6 ? ; t j =25c - 1836ns t r rise time - 30 - ns t d(off) turn-off delay time - 80 160 ns t f fall time - 72 - ns tr2 (p-channel), source-drain diode characteristics v sd source-drain voltage i s = -300 ma; v gs =0v; t j = 25 c -0.48 -0.84 -1.2 v table 7. characteristics ?continued symbol parameter conditions min typ max unit
PMDT290UCE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 6 october 2011 9 of 20 nxp semiconductors PMDT290UCE 20 / 20 v, 800 / 550 ma n/p-channel trench mosfet t j = 25 c t j = 25 c; v ds = 5 v (1) minimum values (2) typical values (3) maximum values fig 9. tr1; output characte ristics: drain current as a function of drain-source voltage; typical values fig 10. tr1; sub-threshold drain current as a function of gate-source voltage t j = 25 c (1) v gs = 1.3 v (2) v gs = 1.4 v (3) v gs = 1.6 v (4) v gs = 1.8 v (5) v gs = 2.5 v (6) v gs = 4.5 v i d = 400 ma (1) t j = 150 c (2) t j = 25 c fig 11. tr1; drain-source on-state resistance as a function of drain current; typical values fig 12. tr1; drain-source on-state resistance as a function of gate-source voltage; typical values v ds (v) 04 3 12 017aaa351 0.4 0.5 0.3 0.2 0.1 0.6 0.7 i d (a) 0.0 4.5 v 2.5 v 1.8 v v gs = 1.6 v 1.4 v 1.2 v 1.0 v 017aaa352 10 C4 10 C5 10 C3 i d (a) 10 C6 v gs (v) 0.00 1.25 1.00 0.50 0.75 0.25 (1) (2) (3) i d (a) 0.7 0.5 0.1 0.6 0.4 0.2 0.0 0.3 017aaa353 1.0 0.5 1.5 2.0 r dson () 0.0 (1) (2) (3) (4) (5) (6) v gs (v) 05 4 23 1 017aaa354 1.0 0.5 1.5 2.0 r dson () 0.0 (1) (2)
PMDT290UCE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 6 october 2011 10 of 20 nxp semiconductors PMDT290UCE 20 / 20 v, 800 / 550 ma n/p-channel trench mosfet v ds > i d r dson (1) t j = 25 c (2) t j = 150 c fig 13. tr1; transfer characteristics: drain current as a function of gate-source voltage; typical values fig 14. tr1; normalized drain-source on-state resistance as a function of junction temperature; typical values i d = 0.25 ma; v ds = v gs (1) maximum values (2) typical values (3) minimum values f = 1 mhz; v gs = 0 v (1) c iss (2) c oss (3) c rss fig 15. tr1; gate-source threshold voltage as a function of junction temperature fig 16. tr1; input, output and reverse transfer capacitances as a function of drain-source voltage; typical values v gs (v) 0.0 2.5 2.0 1.0 1.5 0.5 017aaa355 0.7 i d (a) 0.5 0.3 0.1 0.0 0.2 0.4 0.6 (1) (2) t j (c) C60 180 120 060 017aaa356 1.00 1.25 0.75 1.50 1.75 a 0.50 t j (c) C60 180 120 060 017aaa357 0.50 0.75 0.25 1.00 1.25 v gs(th) (v) 0.00 (1) (2) (3) 017aaa358 v ds (v) 10 C1 10 2 10 1 10 10 2 c (pf) 1 (1) (2) (3)
PMDT290UCE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 6 october 2011 11 of 20 nxp semiconductors PMDT290UCE 20 / 20 v, 800 / 550 ma n/p-channel trench mosfet i d = 0.5 a; v ds = 10 v; t amb = 25 c fig 17. tr1; gate-source voltage as a function of gate charge; typical values fig 18. gate charge waveform definitions v gs = 0 v (1) t j = 150 c (2) t j = 25 c t j = 25 c fig 19. tr1; source current as a function of source-drain voltage; typical values fig 20. tr2; output characteristics: drain current as a function of drain-source voltage; typical values q g (nc) 0.0 0.5 0.4 0.2 0.3 0.1 017aaa359 2 3 1 4 5 v gs (v) 0 017aaa137 v gs v gs(th) q gs1 q gs2 q gd v ds q g(tot) i d q gs v gs(pl) v sd (v) 0.0 1.0 0.8 0.4 0.6 0.2 017aaa360 0.7 i s (a) 0.5 0.3 0.1 0.0 0.2 0.4 0.6 (1) (2) v ds (v) 0-4 -3 -1 -2 017aaa363 -0.2 -0.3 -0.1 -0.4 -0.5 i d (a) 0.0 -4.5 v -2.5 v -2.0 v v gs = -1.8 v -1.6 v -1.4 v
PMDT290UCE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 6 october 2011 12 of 20 nxp semiconductors PMDT290UCE 20 / 20 v, 800 / 550 ma n/p-channel trench mosfet t j = 25 c; v ds = -5 v (1) minimum values (2) typical values (3) maximum values t j = 25 c (1) v gs = -1.5 v (2) v gs = -1.8 v (3) v gs = -2.0 v (4) v gs = -2.5 v (5) v gs = -4.5 v fig 21. tr2; sub-threshold drain current as a function of gate-source voltage fig 22. tr2; drain-source on-state resistance as a function of drain current; typical values i d = -400 ma (1) t j = 150 c (2) t j = 25 c v ds > i d r dson (1) t j = 25 c (2) t j = 150 c fig 23. tr2; drain-source on-state resistance as a function of gate-source voltage; typical values fig 24. tr2; transfer characteristics: drain current as a function of gate-sou rce voltage; typical values 017aaa364 v gs (v) 0.0 -1.5 -1.0 -0.5 -10 -4 -10 -5 -10 -3 i d (a) -10 -6 (1) (2) (3) i d (a) 0.0 -0.5 -0.4 -0.2 -0.3 -0.1 017aaa365 2 1 3 4 r dson () 0 (1) (2) (3) (4) (5) v gs (v) 0-5 -4 -2 -3 -1 017aaa366 2 1 3 4 r dson () 0 (1) (2) v gs (v) 0.0 -2.0 -1.5 -0.5 -1.0 017aaa367 -0.2 -0.3 -0.1 -0.4 -0.5 i d (a) 0.0 (1) (2)
PMDT290UCE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 6 october 2011 13 of 20 nxp semiconductors PMDT290UCE 20 / 20 v, 800 / 550 ma n/p-channel trench mosfet i d = -0.25 ma; v ds = v gs (1) maximum values (2) typical values (3) minimum values fig 25. tr2; normalized drain-source on-state resistance as a function of ambient temperature; typical values fig 26. tr2; gate-source threshold voltage as a function of junction temperature f = 1 mhz; v gs = 0 v (1) c iss (2) c oss (3) c rss i d = -0.4 a; v dd = -10 v; t amb = 25 c fig 27. tr2; input, output and reverse transfer capacitances as a function of drain-source voltage; typical values fig 28. tr2; gate-source voltage as a function of gate charge; typical values t j (c) -60 180 120 060 017aaa368 1.0 0.5 1.5 2.0 a 0.0 t j (c) -60 180 120 060 017aaa369 -0.5 -1.0 -1.5 v gs(th) (v) 0.0 (1) (2) (3) 017aaa370 v ds (v) -10 -1 -10 2 -10 -1 10 10 2 c (pf) 1 (1) (2) (3) q g (nc) 0.0 0.8 0.6 0.2 0.4 017aaa371 -2 -3 -1 -4 -5 v gs (v) 0
PMDT290UCE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 6 october 2011 14 of 20 nxp semiconductors PMDT290UCE 20 / 20 v, 800 / 550 ma n/p-channel trench mosfet 8. test information 8.1 quality information this product has been qualified in accordance with the automotive electronics council (aec) standard q101 - stress test qualific ation for discrete semiconductors, and is suitable for use in automotive applications. v gs = 0 v (1) t amb = 150 c (2) t amb = 25 c fig 29. gate charge waveform definitions fig 30. tr2; source current as a function of source-drain voltage; typical values 017aaa137 v gs v gs(th) q gs1 q gs2 q gd v ds q g(tot) i d q gs v gs(pl) v sd (v) 0.0 -1.0 -0.8 -0.4 -0.6 -0.2 017aaa372 -0.2 -0.3 -0.1 -0.4 -0.5 i s (a) 0.0 (1) (2) fig 31. duty cycle definition t 1 t 2 p t 006aaa812 duty cycle = t 1 t 2
PMDT290UCE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 6 october 2011 15 of 20 nxp semiconductors PMDT290UCE 20 / 20 v, 800 / 550 ma n/p-channel trench mosfet 9. package outline fig 32. package outline sot666 unit b p cd e e 1 h e l p w references outline version european projection issue date 04-11-08 06-03-16 iec jedec jeita mm 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 0.5 e 1.0 1.7 1.5 0.1 y 0.1 dimensions (mm are the original dimensions) 0.3 0.1 sot666 b p pin 1 index d e 1 e a l p detail x h e e a s 0 1 2 mm scale a 0.6 0.5 c x 123 4 5 6 plastic surface-mounted package; 6 leads sot666 ys w m a
PMDT290UCE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 6 october 2011 16 of 20 nxp semiconductors PMDT290UCE 20 / 20 v, 800 / 550 ma n/p-channel trench mosfet 10. soldering fig 33. reflow soldering footprint for sot666 solder lands placement area occupied area solder paste sot666_fr 2.75 2.45 2.1 1.6 0.4 (6) 0.55 (2) 0.25 (2) 0.6 (2) 0.65 (2) 0.3 (2) 0.325 (4) 0.45 (4) 0.5 (4) 0.375 (4) 1.72 1.7 1.075 0.538 dimensions in mm
PMDT290UCE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 6 october 2011 17 of 20 nxp semiconductors PMDT290UCE 20 / 20 v, 800 / 550 ma n/p-channel trench mosfet 11. revision history table 8. revision history document id release date data sheet status change notice supersedes PMDT290UCE v.1 20111006 product data sheet - -
PMDT290UCE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 6 october 2011 18 of 20 nxp semiconductors PMDT290UCE 20 / 20 v, 800 / 550 ma n/p-channel trench mosfet 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple de vices. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions preview ? the document is a preview version only. the document is still subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any re presentations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. draft ? the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and r eplaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. document status [1] [2] product status [3] definition objective [short] data sheet development this document contai ns data from the objective spec ification for product developmen t. preliminary [short] data sheet qua lification this document contains data from the preliminary specification. product [short] data sheet production this doc ument contains the pr oduct specification.
PMDT290UCE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 6 october 2011 19 of 20 nxp semiconductors PMDT290UCE 20 / 20 v, 800 / 550 ma n/p-channel trench mosfet terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms an d conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any licens e under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulati ons. export might require a prior authorization from competent authorities. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. adelante , bitport , bitsound , coolflux , coreuse , desfire , ez-hv , fabkey , greenchip , hipersmart , hitag , i2c-bus logo, icode , i-code , itec , labelution , mifare , mifare plus , mifare ultralight , moreuse , qlpak , silicon tuner , siliconmax , smartxa , starplug , topfet , trenchmos , trimedia and ucode ? are trademarks of nxp b.v. hd radio and hd radio logo ? are trademarks of ibiquity digital corporation. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors PMDT290UCE 20 / 20 v, 800 / 550 ma n/p-channel trench mosfet ? nxp b.v. 2011. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 6 october 2011 document identifier: PMDT290UCE please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 general description . . . . . . . . . . . . . . . . . . . . . .1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 6 thermal characteristics . . . . . . . . . . . . . . . . . . .5 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .7 8 test information . . . . . . . . . . . . . . . . . . . . . . . . .14 8.1 quality information . . . . . . . . . . . . . . . . . . . . . .14 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . .15 10 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . .17 12 legal information. . . . . . . . . . . . . . . . . . . . . . . .18 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . .18 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .19 13 contact information. . . . . . . . . . . . . . . . . . . . . .19

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